A metal-insulator transition study of VO2 thin films grown on sapphire substrates
A metal-insulator transition study of VO2 thin films grown on sapphire substrates
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DOI：
10.1063/1.4997437
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发表时间：
2017-12
影响因子：
3.2
通讯作者：
Shifeng Yu;Shuyu Wang;Ming Lu;L. Zuo
中科院分区：
文献类型：
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作者：
Shifeng Yu;Shuyu Wang;Ming Lu;L. Zuo
采用直流磁控溅射法在蓝宝石衬底上制备了钒薄膜，然后在管式炉中充氧，在不同温度和氧气流量下进行氧化。系统研究了氧气流量和氧化温度对氧化钒薄膜电学和结构性能的影响。结果表明，纯二氧化钒（VO 2）只能在很窄的温度和氧气流量范围内获得。在金属-绝缘体转变期间的电阻率变化取决于氧化条件从0.2到4个数量级变化。与文献中的结果相比，在金属-绝缘体相变过程中观察到大的热滞后。适当的氧化条件可以显著降低热滞后。所制备的VO 2薄膜在电传感器和其他智能器件的开发中具有潜在的应用价值。
Vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. The fabricated VO2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.