Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching
Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching
复制标题
偏振光辅助电化学刻蚀多孔硅层光致发光各向异性的不同行为
DOI：
10.1063/1.1449538
复制
发表时间：
2002
影响因子：
4
通讯作者：
H. Koyama
中科院分区：
文献类型：
--
作者：
H. Koyama
在HF溶液中，用阳极氧化法在n型Si基片上制备了多孔硅发光层。结果表明，在30 mA/cm ~ 2的电流密度下阳极氧化并轻微电化学氧化钝化的样品的光致发光显示出明显的偏振记忆各向异性：当激发激光的矢量电场（Eexc）与阳极氧化过程中所用的光的矢量电场（Eetch）平行时，偏振记忆程度最大;当激发激光的矢量电场（Eexc）与阳极氧化过程中所用的光的矢量电场（Eetch）垂直时，偏振记忆程度最小。这些最大值和最小值与以前报道的方向完全不同。此外，各向异性被发现是弱的低阳极氧化电流密度为2.3 mA/cm 2。这些实验结果进行了讨论的基础上的电化学，而不是光化学，减薄的硅-多晶硅层的组件。
Luminescent porous silicon (PSi) layers have been made on n-type Si wafers by anodization in a HF solution under illumination with linearly polarized light. It is observed that the photoluminescence from samples anodized at a current density of 30 mA/cm2 and slightly oxidized electrochemically for passivation exhibits a significant anisotropy in polarization memory (PM): the degree of PM becomes maximum when the vector electric field (Eexc) of excitation laser light is parallel to that (Eetch) of the light used during anodization, and minimum when Eexc is perpendicular to Eetch. These maxima and minima are in totally different directions from those reported previously. In addition, the anisotropy is found to be weak at low anodization current density of 2.3 mA/cm2. These experimental results are discussed based on the electrochemical, rather than photochemical, thinning of Si-nanocrystal assemblies in PSi layers.