Surface Ligand Engineering for Near-Unity Quantum Yield Inorganic Halide Perovskite QDs and High-Performance QLEDs
Surface Ligand Engineering for Near-Unity Quantum Yield Inorganic Halide Perovskite QDs and High-Performance QLEDs
复制标题
近统一量子产率无机卤化物钙钛矿量子点和高性能 QLED 的表面配体工程
DOI：
10.1021/acs.chemmater.8b02544
复制
发表时间：
2018-09-11
影响因子：
8.6
通讯作者：
Jiang, Yang
中科院分区：
文献类型：
--
作者：
Li, Guopeng;Huang, Jingsheng;Jiang, Yang
尽管全无机CsPbX 3（X = Br或I）量子点（QD）在发光二极管（QLED）中具有巨大的潜力，但其发光性能受到QD表面长绝缘配体的阻碍。为了解决这个问题，一种有效的表面配体工程方法已经通过使用短共轭分子配体苯乙胺（PEA）作为配体来合成CsPbX3量子点，然后用苯乙基溴化铵（PEABr）或苯乙基碘化铵（PEAI）处理CsPbX3量子点膜来执行。结果表明，短的共轭分子配体成功地吸附在CsPbX3量子点表面，取代长的绝缘配体，从而显著增强了量子点的载流子注入和输运。苯乙胺（PEA）作为合成配体的掺入导致在CsPbBr 3和CsPbI 3量子点的陷阱态较少，表现出接近统一的光致发光量子产率（PLQYs）分别为93%和95%。CsPbBr3和CsPbI3量子点发光二极管的发光亮度分别为1000 nm和1000 nm。
Despite the great potential of all-inorganic CsPbX3 (X = Br or I) quantum dots (QDs) for light-emitting diodes (QLEDs), their emission properties have been impeded by the long insulating ligands on the QD surface. To address the problem, an efficient surface ligand engineering method has been executed by using a short conjugation molecular ligand phenethylamine (PEA) as ligands to synthesize CsPbX3 QDs and then treating the CsPbX3 QD films with phenethylammonium bromide (PEABr) or phenethylammonium iodide (PEAI). The results indicate that the short conjugation molecular ligand is successfully adsorbed on the surface of CsPbX3 QDs to instead long insulating ligands, resulting in the remarkable enhancement of the carrier injection and transport. The incorporation of phenethylamine (PEA) as synthetic ligand causes the fewer trap states in both CsPbBr3 and CsPbI3 QDs, exhibiting the near-unity photoluminescence quantum yields (PLQYs) of 93% and 95%, respectively. The luminance of CsPbBr3 and CsPbI3 QLEDs coul...