ON A MICROELECTROMECHANICAL NONVOLATILE MEMORY CELL
ON A MICROELECTROMECHANICAL NONVOLATILE MEMORY CELL
复制标题
DOI：
10.1109/16.59913
复制
发表时间：
1990-10-01
影响因子：
3.1
通讯作者：
HALG, B
中科院分区：
文献类型：
--
作者：
HALG, B
研究了一种基于微机电的集成非易失性存储单元。它由一个薄的微机械桥组成，该桥发生弹性变形，从而具有两个稳定的机械状态，逻辑电平 0 和 1 被分配给这两个状态。可以使用静电力改变电桥的状态，并且可以通过感测相应的电容来读出电桥的状态。这种器件的性能已通过简单的分析模型进行了粗略估计，并且实验样品已使用稍作修改的 MOS IC 工艺制造。存储单元占用的面积比传统随机存取存储器的单元大约10倍，并且完全不受电磁场和机械冲击的影响，并且存储的数据可以无限期保留。开关电压已达到 30 V 左右，预计可实现大量写入周期且读/写时间较短。<>
An integrated nonvolatile memory cell based on microelectromechanics is investigated. It consists of a thin micromachined bridge elastically deformed in such a way that it has two stable mechanical states to which the logical levels 0 and 1 are assigned. The state of the bridge can be changed using electrostatic forces and it may be read out by sensing the corresponding capacitance. The performance of such a device has been roughly estimated by a simple analytical model, and experimental samples have been fabricated using a slightly adapted MOS IC process. The memory cells occupy an area about 10 times larger than the cells of a conventional random access memory and are completely immune to electromagnetic fields and mechanical shocks, and the stored data are retained for an unlimited time. Switching voltages around 30 V have been achieved, and a huge number of write cycles with low read/write times are expected.<>