Sputtering deposition of Al-doped zinc oxide thin films using mixed powder targets
Sputtering deposition of Al-doped zinc oxide thin films using mixed powder targets
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DOI：
10.7567/jjap.55.01aa08
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发表时间：
2015
影响因子：
1.5
通讯作者：
T. Ohshima;T. Maeda;Y. Tanaka;Hiroharu Kawasaki;Y. Yagyu;T. Ihara;Y. Suda
中科院分区：
文献类型：
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作者：
T. Ohshima;T. Maeda;Y. Tanaka;Hiroharu Kawasaki;Y. Yagyu;T. Ihara;Y. Suda
溅射沉积通常使用高密度体靶。这种制造工艺具有各种问题，包括在加热期间材料的劣化和难以以精确比例混合大量材料。然而，这些问题可以通过使用粉末靶来解决。本研究利用射频磁控溅射技术，分别采用粉末靶和体靶制备了Al掺杂的ZnO（AZO）透明导电薄膜。粉末和块状靶都形成晶体结构。在X射线衍射测量中观察到ZnO（002）峰。用该粉末靶制备的薄膜的平均透过率为82%，电阻率为0.548 Ω · cm。粉末靶的沉积速率低于块状靶。
Sputtering deposition generally uses high-density bulk targets. Such a fabrication process has various problems including deterioration of the material during heating and difficulty in mixing a large number of materials in precise proportions. However, these problems can be solved by using a powder target. In this study, we prepared Al-doped ZnO (AZO) as transparent conductive thin films by radio-frequency magnetron sputtering with powder and bulk targets. Both the powder and bulk targets formed crystalline structures. The ZnO (002) peak was observed in the X-ray diffraction measurements. The mean transparency and resistivity of the films prepared with the powder target were 82% and 0.548 Ω · cm, respectively. The deposition rate with the powder target was lower than that with the bulk target.