Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices
Photoluminescence study of interface defects in high‐quality GaAs‐GaAlAs superlattices
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DOI：
10.1063/1.336476
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发表时间：
1986-03
影响因子：
3.2
通讯作者：
B. Deveaud;A. Regreny;J. Emery;A. Chomette
中科院分区：
文献类型：
--
作者：
B. Deveaud;A. Regreny;J. Emery;A. Chomette
利用发光和发光激发光谱，我们研究了一系列非常高质量的分子束外延生长的多量子阱和超晶格结构。当生长过程被优化时，观察到的激子峰的分裂的线宽和外观的减少。这种行为是由GaAs/GaAlAs界面处的生长岛的扩大来解释的。分裂，观察到的发光和发光激发，是由非常大的，只有一个单层高，界面生长缺陷的发生解释。在我们的结构中引入更大的威尔斯井（+3a/2或+5a/2）明确证实了这一属性。观察到的分裂与计算值吻合得很好。
Using luminescence and luminescence excitation spectroscopy, we have studied a series of very high‐quality molecular beam epitaxy grown multiple quantum well and superlattice structures. Reduction of the linewidth and appearance of a splitting of the exciton peaks is observed when the growth process is optimized. This behavior is explained by the enlargement of the growth islands at the GaAs/GaAlAs interfaces. The splitting, observed both in luminescence and in luminescence excitation, is explained by the occurrence of very large, only one monolayer high, interface growth defects. Introduction of larger wells in our structures (+3a/2 or +5a/2) brings a clear confirmation of this attribution. The observed splittings are in good agreement with calculated values.