Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates
Structural and Optical Properties of AlInN Films Grown on Sapphire Substrates
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DOI：
10.1143/jjap.47.612
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发表时间：
2008-01
影响因子：
1.5
通讯作者：
Q. Guo;Tooru Tanaka;M. Nishio;H. Ogawa
中科院分区：
文献类型：
--
作者：
Q. Guo;Tooru Tanaka;M. Nishio;H. Ogawa
我们报道了在(0001)蓝宝石衬底上，在Ar和N气氛中，用铝和铟为靶材的射频反应磁控溅射生长的AlIn薄膜的结构和光学性质。X射线衍射分析和原子力显微镜分析表明，AlN薄膜表面光滑，由AlN薄膜的(0002)衍射峰得到的c轴晶格常数随Al组分x的增加而减小。光学透过率和反射谱分析表明，AlN薄膜具有AlN和InN的直接带隙结构。通过改变In靶和Al靶的射频功率比，可以调节AlIn薄膜的带隙能量。
We report the structural and optical properties of AlInN films grown on (0001) sapphire substrates by reactive radio-frequency (rf) magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. X-ray diffraction analysis and atomic force microscopy show that AlInN films with a smooth surface can be obtained and that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the AlInN films decreases with an increase in the Al composition x. Optical transmittance and reflectance spectra analysis reveals that the AlInN films are of a direct bandgap structure as AlN and InN. The bandgap energy of the AlInN films can be tailored by varying the ratio of the rf power of the indium target to that of the aluminium target.