Pressure-induced transformations and superconductivity of amorphous germanium
Pressure-induced transformations and superconductivity of amorphous germanium
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DOI：
10.1103/physrevb.82.020507
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发表时间：
2010-07-15
影响因子：
3.7
通讯作者：
Nefedova, M. V.
中科院分区：
文献类型：
--
作者：
Barkalov, O. I.;Tissen, V. G.;Nefedova, M. V.
采用拉曼光谱法结合分子动力学模拟研究了压力对非晶锗的影响。由于低密度非晶半导体和金属高密度多晶（HDA）之间发生了多晶态转变，在压力增加/减少过程中，在11-12 GPa和7-5.5 GPa处，由于最近邻的Ge-Ge振动，主峰位置出现了较大的跳变。我们在金刚石砧细胞中使用磁化率测量了超导转变温度（T-c），并确定高密度HDA多晶的T-c高于β - sn结构的Ge-II晶相。
The effect of pressure on amorphous Ge was probed by Raman spectroscopy combined with molecular-dynamics simulations. A large jump occurs in the principal peak position due to nearest-neighbor Ge-Ge vibrations at 11-12 GPa and 7-5.5 GPa, respectively, during increasing/decreasing pressure due to a polyamorphic transition occurring between the low-density amorphous semiconductor and a metallic high-density polyamorph (HDA). We measured the superconducting transition temperature (T-c) using magnetic susceptibility measurements in the diamond anvil cell and determined that T-c for the high-density HDA polyamorph was higher than that for the beta-Sn structured Ge-II crystalline phase.