Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
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DOI：
10.1143/jjap.43.7857
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发表时间：
2004-11
影响因子：
1.5
通讯作者：
S. Morita;A. Shinozaki;Yuuki Morita;K. Nishimura;T. Okazaki;S. Urabe;M. Morita
中科院分区：
文献类型：
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作者：
S. Morita;A. Shinozaki;Yuuki Morita;K. Nishimura;T. Okazaki;S. Urabe;M. Morita
使用 Al/氧化物/n-Si 结构检查了通过厚度约为 3.1 nm 的超薄二氧化硅薄膜的隧道电流，该薄膜是通过在加热过程中控制预氧化物生长而在 n-Si (100) 上形成的。通过预氧化物生长控制，通过氧化物从 n-Si 到 Al 的电子隧道电流减少，介电击穿电压增加。从 Al 到 n-Si 的电子隧道电流通过曝光而增加。电子隧道电流的增加可以通过光激发形成的反型层氧化物电压的增加来解释。
Tunneling current through ultrathin silicon dioxide films with a thickness of approximately 3.1 nm, formed on n-Si (100) by controlling preoxide growth during heating, is examined using Al/oxide/n-Si structures. Electron tunneling current through the oxide from n-Si to Al is decreased and the dielectric breakdown voltage is increased by the preoxide growth control. Electron tunneling current from Al to n-Si is increased by light exposure. The increase in electron tunneling current can be explained by the increase in oxide voltage with an inversion layer formed by photoexcitation.