One-dimensional edge state of Bi thin film grown on Si(111)
One-dimensional edge state of Bi thin film grown on Si(111)
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DOI：
10.1063/1.4927206
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发表时间：
2015-07-20
影响因子：
4
通讯作者：
Takagi, Noriaki
中科院分区：
文献类型：
--
作者：
Kawakami, Naoya;Lin, Chun-Liang;Takagi, Noriaki
用扫描隧道显微镜和能谱研究了Si（111）衬底上生长的Bi薄膜的几何结构和电子结构。我们已经发现了两种类型的边缘，其中之一主机的电子状态本地化一维。我们还揭示了局域边缘态的能量色散的准粒子干涉图案作为能量的函数的演变。这些光谱发现很好地再现了大块Bi晶体解理表面所获得的结果[I. K. Drozdov等人，10，664（2014）]。目前的结果表明，沉积的Bi膜提供了一个易于处理的阶段，进一步审查的一维边缘状态。(C)2015 AIP Publishing LLC.
The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state. (C) 2015 AIP Publishing LLC.