Electronic structure of ideal metal/GaAs contacts.
Electronic structure of ideal metal/GaAs contacts.
复制标题
DOI：
10.1103/physrevlett.65.2728
复制
发表时间：
1990-11
影响因子：
8.6
通讯作者：
M. Schilfgaarde;N. Newman
中科院分区：
文献类型：
--
作者：
M. Schilfgaarde;N. Newman
The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d elecotrons are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky barrier height. These calculations contradict models which invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning
