Process Variation Model and Analysis for Domain Wall-Magnetic Tunnel Junction Logic
Process Variation Model and Analysis for Domain Wall-Magnetic Tunnel Junction Logic
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DOI：
10.1109/iscas45731.2020.9180675
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发表时间：
2020-10
期刊：
影响因子：
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通讯作者：
Xuan Hu;Alexander J. Edwards;T. Xiao;C. Bennett;J. Incorvia;M. Marinella;J. Friedman
中科院分区：
文献类型：
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作者：
Xuan Hu;Alexander J. Edwards;T. Xiao;C. Bennett;J. Incorvia;M. Marinella;J. Friedman
畴壁 - 磁性隧道结（DW - MTJ）是一种自旋电子器件，由于其能耗低、尺寸小和非易失性，能够实现高效的逻辑电路设计。此外，DW - MTJ是少数几种经实验证明无需任何额外缓冲器即可实现直接级联机制的自旋电子器件之一；这使得大规模DW - MTJ逻辑系统的潜在设计和制造成为可能。然而，DW - MTJ逻辑依赖于电信号和磁态之间的转换，这种转换对工艺缺陷很敏感。因此，在制造之前分析此类DW - MTJ器件的鲁棒性以预测系统可靠性是很重要的。在此，我们提出一种新的DW - MTJ模型，该模型综合了工艺变化的影响，以便能够对DW - MTJ逻辑进行分析和优化。这将使电路和器件设计能够增强DW - MTJ逻辑的鲁棒性，并推动高能效自旋电子计算系统的发展。
The domain wall-magnetic tunnel junction (DW-MTJ) is a spintronic device that enables efficient logic circuit design because of its low energy consumption, small size, and non-volatility. Furthermore, the DW-MTJ is one of the few spintronic devices for which a direct cascading mechanism is experimentally demonstrated without any extra buffers; this enables potential design and fabrication of a large-scale DW-MTJ logic system. However, DW-MTJ logic relies on the conversion between electrical signals and magnetic states which is sensitive to process imperfection. Therefore, it is important to analyze the robustness of such DW-MTJ devices to anticipate the system reliability before fabrication. Here we propose a new DW-MTJ model that integrates the impacts of process variation to enable the analysis and optimization of DW-MTJ logic. This will allow circuit and device design that enhances the robustness of DW-MTJ logic and advances the development of energy-efficient spintronic computing systems.