Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes - art. no. 071105
Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes - art. no. 071105
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DOI：
10.1063/1.2173619
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发表时间：
2006-02-13
影响因子：
4
通讯作者：
Hinze, P
中科院分区：
文献类型：
--
作者：
Fuhrmann, D;Netzel, C;Hinze, P
我们优化了GaInN/GaN量子阱结构的内量子效率。对于460 nm的发射波长，实现了73%的高IQE。对于较长的发射波长，计算预测更高的振荡器强度较薄的量子阱，但更高的In含量。我们观察到当QW宽度从2.7 nm减小到1.8 nm时，IQE几乎提高了50%，并且在525 nm处IQE=40%的情况下，对于整个蓝色到绿色光谱区域增加In含量。在我们的结构中，输出功率随电流增加而发生的典型饱和，特别是对于绿色发光二极管，是非常弱的。
We have optimized the internal quantum efficiency (IQE) of GaInN/GaN quantum-well (QW) structures. For an emission wavelength of 460 nm, a high IQE of 73% was achieved. For a longer emission wavelength, calculations predict higher oscillator strength for thinner QWs but higher In content. We observe an improvement in IQE of almost 50% when reducing the QW width from 2.7 nm to 1.8 nm, and increasing the In content for the whole blue to green spectral region with IQE=40% at 525 nm. The typical saturation of the output power with increasing current that occurs, particularly for green-light-emitting diodes, is extremely weak in our structures.