Strain-driven control of piezoelectricity in (Na,Bi)TiO3-BaTiO3 epitaxial thin films
Strain-driven control of piezoelectricity in (Na,Bi)TiO3-BaTiO3 epitaxial thin films
复制标题
DOI：
10.1063/1.4804135
复制
发表时间：
2013-05
影响因子：
4
通讯作者：
Y. Tanaka;T. Harigai;H. Adachi;N. Sakamoto;N. Wakiya;Hisao Suzuki;E. Fujii
中科院分区：
文献类型：
--
作者：
Y. Tanaka;T. Harigai;H. Adachi;N. Sakamoto;N. Wakiya;Hisao Suzuki;E. Fujii
研究了(Na，Bi)TiO3NBT(−−BT)薄膜在不同(10 0)和(110)取向衬底上的热应变对其压电性的影响。压缩-热应变导致了残余极化的增加，而不伴随介电常数的降低，从而导致了压电系数e*31的增加。对于(110)衬底上的薄膜，晶格在拉应变和压应变下都变形为正交对称，并且出现了面内各向异性，e*31达到−19~−20.6C/m2。我们得出结论：在(110)衬底上生长的−薄膜具有较大的压电性，这与正交相的出现有关。
Thermal strain effect on the piezoelectricity was investigated for (Na,Bi)TiO3−BaTiO3 (NBT−BT) thin films on various substrates with (100) and (110) orientations. The compressive-thermal strain caused an increase in the remnant polarization unaccompanied by a decrease in dielectric permittivity, which resulted in enhancement of the piezoelectric coefficient, e*31. For films on (110) substrates, the crystal lattices were distorted to orthorhombic symmetry under both the tensile- and compressive-strains and the in-plane anisotropy of piezoelectricity emerged with e*31 as large as −19 to −20.6 C/m2. We conclude that the large piezoelectricity in NBT−BT films on (110) substrates is related to the appearance of orthorhombic phase.