Early morphological changes on Si(111) surfaces during UHV processing
Early morphological changes on Si(111) surfaces during UHV processing
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特高压处理过程中 Si(111) 表面的早期形态变化
DOI：
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发表时间：
2007
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影响因子：
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通讯作者：
J. Blakely
中科院分区：
文献类型：
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作者：
V. Ignatescu;J. Blakely
详细跟踪了超高压退火过程中邻位 Si(111) 表面形态的演变，涉及两种类型的表面区域：(a) 表面的一般平坦区域和 (b) 靠近图案结构边缘（如陨石坑和台面）。测量的表面粗糙度首先通过奥斯特瓦尔德熟化过程增加，然后接近原子级平坦表面的粗糙度。靠近蚀刻坑边界形成的形态最初与局部表面传输连续介质理论预测的形态相似，但是，随着表面粗糙度的降低，小面取代了圆角。只要由于蒸发而发生连续阶跃流，在特高压退火过程中，在孤立的凹坑周围形成的脊就会持续存在。
The evolution of the morphology of vicinal Si(111) surfaces during UHV annealing was followed in details for two types of surface regions: (a) general flat areas of the surface and (b) near the edges of patterned structures such as craters and mesas. The measured surface roughness first increases through an Ostwald ripening process and then approaches that of an atomically flat surface. The morphologies that develop close to the boundaries of etched craters are initially similar to those predicted by the continuum theory of local surface transport, but, as the surface roughness decreases, facets replace the rounded corners. The ridges that develop around isolated craters persist during UHV annealing as long as continuous step flow due to evaporation is taking place.