The radiation-induced crystalline-to-amorphous transition in zircon
The radiation-induced crystalline-to-amorphous transition in zircon
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DOI：
10.1557/jmr.1994.0688
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发表时间：
1994-03
影响因子：
2.7
通讯作者：
W. J. Weber;R. Ewing;Luming Wang
中科院分区：
文献类型：
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作者：
W. J. Weber;R. Ewing;Luming Wang
通过对天然锆石、掺钚锆石和离子束辐照锆石的研究，全面了解了锆石ZrSiO_4在宽时间尺度（0.5h ~ 5.7亿年）内的辐射效应。锆石中的辐射损伤导致点缺陷和非晶区域的同时积累。的非晶化过程是一致的模型的基础上的粒子轨道的多重重叠，这表明非晶化发生的结果的临界缺陷浓度。非晶化剂量随温度的升高分为两个阶段（低于300 K和高于473 K），在300 K时几乎与损伤源（α衰变事件或重离子束）无关。完全非晶锆石的再结晶发生在1300 K以上，是一个两步过程，首先形成准立方ZrO_2。
A comprehensive understanding of radiation effects in zircon, ZrSiO_4, over a broad range of time scales (0.5 h to 570 million years) has been obtained by a study of natural zircon, Pu-doped zircon, and ion-beam irradiated zircon. Radiation damage in zircon results in the simultaneous accumulation of both point defects and amorphous regions. The amorphization process is consistent with models based on the multiple overlap of particle tracks, suggesting that amorphization occurs as a result of a critical defect concentration. The amorphization dose increases with temperature in two stages (below 300 K and above 473 K) and is nearly independent of the damage source (α-decay events or heavy-ion beams) at 300 K. Recrystallization of completely amorphous zircon occurs above 1300 K and is a two-step process that involves the initial formation of pseudo-cubic ZrO_2.