Effects of Film Thickness and Annealing Conditions on 2223 Phase Growth in BSCCO Films Produced by Pb Vapor Doping
Effects of Film Thickness and Annealing Conditions on 2223 Phase Growth in BSCCO Films Produced by Pb Vapor Doping
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膜厚和退火条件对Pb蒸气掺杂BSCCO薄膜2223相生长的影响
DOI：
10.1143/jjap.29.l943
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
Satoshi Takahashi
中科院分区：
文献类型：
--
作者：
H. Hayakawa;Keikichi G. Nakamura;S. Ikeda;K. Ogawa;Satoshi Takahashi
研究了用Pb气相掺杂法提高BiSrCaCuO薄膜中2223相含量的条件。确定了2223相生长的最佳范围是退火条件和薄膜厚度的函数。结果表明，在Pb气氛中850°C×3 h退火后，在835℃下退火5 ~ 12h，获得无杂质的2223相最为有效。由此得到的2223相的分数超过99%。
The conditions for increasing the fraction of the 2223 phase in BiSrCaCuO films in the Pb vapor doping method were investigated. The optimum range for the growth of the 2223 phase was determined as a function of annealing condition and film thickness. It is shown that the annealing at 835°C for 5 to 12 h after 850°C×3 h annealing in Pb atmosphere is most effective in obtaining the impurity-free 2223 phase. The fraction of the 2223 phase thus obtained exceeded 99%.