A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction
A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction
复制标题
基于准断隙能带排列异质结的高性能沟槽栅隧道场效应晶体管
DOI：
10.1088/1361-6528/ac56b9
复制
发表时间：
2022-05-28
期刊：
影响因子：
3.5
通讯作者：
Zhang, Hao
中科院分区：
文献类型：
--
作者：
Chen, Shupeng;Wang, Shulong;Zhang, Hao
本文提出了一种基于准断隙能带对准的隧穿场效应晶体管（QB-TFET），并对其进行了模拟研究。为了提供更高的通态电流，InGaAs/GaAsSb异质结具有准断隙能带排列，应用于QB-TFET以提高带间隧穿率。采用沟槽栅结构和InGaAs口袋层进一步提高了隧穿效率。为了抑制源极到漏极的关态隧穿路径引起的漏电流，在n+ InGaAs漏极和p+ GaAsSb源极之间插入本征InGaAs隔离层。为了进一步提高对沟道栅压的控制能力，采用TiO 2作为所提出的QB-TFET的栅介质。此外，本文还研究了In（x）Ga_（1-x）As和GaAs（y）Sb_（1-y）的x和y组分对准断隙隧穿结的影响。分析了不同x和y分数的QB-TFET的电特性变化。与其他工作相比，所提出的QB-TFET在性能上显示出明显的优势。结果，可以获得921 μ A μ m（-1）的大通态电流（I（on））。此外，当I（on）= 1 μ A μ m（-1）时，可以实现4.9 mV/dec的陡峭平均亚阈值摆幅（SSavg）。
In this letter, a tunneling field effect transistor based on quasi-broken gap energy band alignment (QB-TFET) is proposed and investigated by simulation method. To offering high on-state current, InGaAs/GaAsSb heterojunction with quasi-broken gap energy band alignment is applied to QB-TFET to improve the band-to-band tunneling rate. Trench gate structure and InGaAs pocket layer are applied to further increase the tunneling efficiency. To suppress the leakage current caused by the off-state tunneling path from source to drain, an intrinsic InGaAs spacer is inserted between n+ InGaAs drain and p+ GaAsSb source. In order to further improve the control ability of gate voltage on channel, TiO2 is used as the gate dielectric of the proposed QB-TFET. Moreover, the effect of x and y fraction of In (x) Ga1-x As and GaAs (y) Sb1-y on quasi-broken gap tunneling junction are studied in this work. The electrical characteristic change of QB-TFET with different x and y fraction is analyzed. The proposed QB-TFET is compared with other works and shows an obvious advantage on performance. As a result, a large on-state current (I (on)) of 921 mu A mu m(-1) can be obtained. Moreover, steep average subthreshold swing (SSavg) of 4.9 mV/dec can be achieved when I (on) = 1 mu A mu m(-1).