High carrier mobility in polycrystalline thin film diamond
High carrier mobility in polycrystalline thin film diamond
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DOI：
10.1063/1.120734
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发表时间：
1998-01-19
影响因子：
4
通讯作者：
Foord, JS
中科院分区：
文献类型：
--
作者：
Looi, HJ;Jackman, RB;Foord, JS
多晶金刚石薄膜具有p型表面导电性。未掺杂的金刚石的p型特性被认为是由于表面或近表面的氢化层所致。在10(17)-10(19)cm(-3)的范围内测量了载流子浓度；可以通过在空气中对生长的薄膜进行热处理来实现对载流子浓度的控制。对于给定的退火温度，产生稳定的载流子浓度。研究了霍尔载流子迁移率，对于载流子浓度接近5×10(17)cm(-3)的薄膜，测得的载流子迁移率为>；70 cm(2)/vs，这是已报道的多晶薄膜金刚石的最高载流子迁移率，相当于掺硼单晶金刚石。(C)1998年美国物理研究所。
Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 10(17)-10(19) cm(-3) have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Hall carrier mobility has been explored and a value of >70 cm(2)/Vs has been measured for a film with a carrier concentration of similar to 5 x 10(17) cm(-3), the highest reported for polycrystalline thin film diamond and equivalent to boron doped single crystal diamond. (C) 1998 American Institute of Physics.