Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength
Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength
复制标题
具有低温相关振荡波长的光泵 GaAs_<1-x>Bi_x 激光操作
DOI：
10.1117/12.907098
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Masahiro Yoshimoto
中科院分区：
文献类型：
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作者：
Yoriko Tominaga;Kunishige Oe;Masahiro Yoshimoto
本文报道了GaAs_（1-x）Bi_x激光器的低温振荡波长的光泵浦激光运转，并展望了Bi基激光器的发展前景。GaAs 0.975Bi 0.025有源层在350 °C下通过分子束外延生长。用光泵浦的方法观察了带Fabry-Perot腔的GaAs_（0.975）Bi_（0.025）/GaAs半导体芯片的激光振荡。在160 ~ 240 K范围内，激光器的特征温度为83 K。激光发射峰能量以-0.18meV/K的恒定速率下降，约为GaAs带隙温度系数的40%。在240 K以上，激光阈值泵浦功率急剧增加，激光发射峰能量开始向更高能量移动。这一结果可能是由于载流子的行为在GaAs 0.975Bi 0.025/GaAs异质界面，其中一个大的价带偏移和几乎平坦的导带偏移预计。
We report here the photo-pumped lasing operation of GaAs1-xBixwith low-temperature-dependent oscillation wavelengths, and show future prospects for the fabrication of Bi-based lasers. The GaAs0.975Bi0.025active layer was grown at 350 °C by molecular beam epitaxy. The lasing oscillation from a GaAs0.975Bi0.025/GaAs semiconductor chip with a Fabry-Perot cavity was observed by photo-pumping. The characteristic temperature of the laser was 83 K in the range between 160 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is 40% of the temperature coefficient of the band gap of GaAs in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to higher energies. This result is probably due to carrier behaviors at the GaAs0.975Bi0.025/GaAs heterointerface, in which a large valence band offset and an almost flat conduction band offset are expected.