FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects
FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects
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DOI：
10.1016/j.microrel.2016.07.133
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发表时间：
2016-09-01
影响因子：
1.6
通讯作者：
Reis, R.
中科院分区：
文献类型：
--
作者：
Bartra, W. E. Calienes;Vladimirescu, A.;Reis, R.
随着尺寸的缩小和片上晶体管数量的增加，即使在海平面上，辐射也会引起集成电路的故障。本文比较了全耗尽SOI（FDSOI）和体CMOS 6T SRAM单元的抗辐射能力。这两种电池都使用TCAD工具进行了模拟，考虑了晶体管不同位置的重离子撞击以及使用不同的撞击角度。考虑了两种类型的辐射效应：单粒子瞬变（SET）和单粒子翻转（SEU）。翻转单元的最小临界收集电荷（CC）在两种技术中几乎相同。然而，它示出了FDSOI SRAM单元需要重离子撞击，其线性能量转移（LET）比体CMOS SRAM单元大大约10倍，以产生类似的CC并翻转单元。(C)2016爱思唯尔有限公司版权所有。
With shrinking dimensions and increased number of on-chip transistors radiation can provoke faults in integrated circuits even at sea level. This paper presents a comparison of fully depleted SOI (FDSOI) and Bulk CMOS 6T SRAM cells' resilience to radiation effects. Both cells were simulated using TCAD tools, considering heavy-ion impacts in different locations of the transistor as well as using different impact angles. Two types of radiation effects have been considered: Single-Event Transients (SETs) and Single-Event Upsets (SEUs). The minimum critical collected charge (CC) to flip a cell is almostthe same in both technologies. However, it is shown that a FDSOI SRAM cell needs a heavy-ion impact with a Linear Energy Transfer (LET) around 10 times greater than a Bulk-CMOS SRAM cell, to generate a similar CC and to flip a cell. (C) 2016 Elsevier Ltd. All rights reserved.