Electron emission from phosphorus- and boron-doped polycrystalline diamond films
Electron emission from phosphorus- and boron-doped polycrystalline diamond films
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磷和硼掺杂多晶金刚石薄膜的电子发射
DOI：
10.1049/el:19950027
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发表时间：
1995
影响因子：
1.1
通讯作者：
K. Gleason
中科院分区：
文献类型：
--
作者：
K. Okano;K. Gleason
本文研究了CVD法生长的掺磷（P-）和掺硼（B）多晶金刚石薄膜的电子发射。与B掺杂膜相比，P掺杂膜的电流密度对电场特性显示出低场发射。从P-和B-掺杂的膜的Fowler-Nordheim（F-N）特性的斜率比，获得发射势垒高度的0.66的比率。这可能是由于P掺杂金刚石膜的n型半导体特性造成的。>
The electron emission from CVD-grown phosphorus (P-) and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films. >