Hole transport through proton-irradiated p-type silicon wafers during electrochemical anodization
Hole transport through proton-irradiated p-type silicon wafers during electrochemical anodization
复制标题
电化学阳极氧化过程中质子辐照 p 型硅片的空穴传输
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
D. Blackwood
中科院分区：
文献类型：
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作者：
M. Breese;F. Champeaux;E. Teo;A. Bettiol;D. Blackwood
使用扫描电子显微镜和光致发光成像对电化学阳极氧化过程中流经$p$型硅质子辐照区域及其周围的空穴电流密度进行了模拟和实验研究。结果表明，对于某些辐射几何形状，邻近辐射线的区域中的电流可能会减少或增强，从而导致多孔硅形成速率的增强或降低以及光致发光强度和特征高度的相应变化。流向表面的电流不受离子束散乱和离子范围末端的高缺陷密度的影响，从而实现了 $ensuremath{sim}200phantom{ 的特征尺寸
ule{0.3em}{0ex}}mathrm{nm}$ 需要达到。这项研究使得能够在阳极氧化晶圆上制造微加工和图案化的多孔硅结构，并精确控制特征尺寸、层厚度以及光致发光发射波长和强度。
The hole current density flowing through and around proton-irradiated areas of $p$-type silicon during electrochemical anodization is simulated and studied experimentally using scanning electron microscopy and photoluminescence imaging. It is shown that for certain irradiation geometries the current flow may be either reduced or enhanced in areas adjacent to irradiated lines, resulting in enhanced or reduced rates of porous silicon formation and corresponding changes in photoluminescence intensity and feature height. The current flow to the surface is unaffected by both the beam straggle and the high defect density at the end of ion range, enabling feature dimensions of $ensuremath{sim}200phantom{
ule{0.3em}{0ex}}mathrm{nm}$ to be attained. This study has enabled fabrication of micromachined and patterned porous silicon structures in anodized wafers with accurate control of feature dimensions, layer thickness, and photoluminescence emission wavelength and intensity.