Anti-Stokes luminescence in the light of second order perturbation theory
Anti-Stokes luminescence in the light of second order perturbation theory
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二阶微扰理论下的反斯托克斯发光
DOI：
10.1063/1.4901075
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发表时间：
2014
影响因子：
4
通讯作者：
B. Bansal
中科院分区：
文献类型：
--
作者：
R. Bhattacharya;B. Pal;B. Bansal
在高质量的GaAs光量子阱中测量了反斯托克斯光致发光。光学声子介导的二阶电偶极子跃迁是亚能带光激发下的带间光吸收和发射的主要途径。这一结论是由二阶微扰计算的预测值与反斯托克斯光致发光强度的测量结果之间的显著一致性得出的，两者都是失谐波长和温度的函数。结果与固体的激光冷却有直接关系，其中声子辅助上转换是必要条件。
Anti-Stokes photoluminescence is measured in high-quality GaAs quantum wells. The primary pathway for interband optical absorption and hence emission under subbandgap photoexcitation is the optical phonon-mediated second-order electric dipole transition. This conclusion is drawn from the remarkable agreement between predictions of second-order perturbation calculation and the measured intensity of anti-Stokes photoluminescence, both as function of the detuning wavelength and temperature. The results are of direct relevance to laser cooling of solids where phonon-assisted upconversion is a necessary condition.