Ion implanted deuterium retention and release from clean and oxidized beryllium
Ion implanted deuterium retention and release from clean and oxidized beryllium
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DOI：
10.1016/j.jnucmat.2009.01.103
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发表时间：
2009-06
影响因子：
3.1
通讯作者：
M. Reinelt;C. Linsmeier
中科院分区：
文献类型：
--
作者：
M. Reinelt;C. Linsmeier
通过结合程序升温脱附、X射线光电子能谱等方法研究了清洁和氧化物覆盖的铍的氘保留和热回收行为。根据实验结果，推导出保留机制，并通过建模获得释放过程的活化能。以 1keV 动能注入的氘被局部捕获在离子诱导缺陷中，释放温度高于 700K。当局部氘浓度大于 0.35 D/Be 时，铍块体处于过饱和状态。这导致形成额外的结合态，释放温度为 450K，并形成 BeD2，BeD2 在 570K 时分解。形成的氘化物的量受注入期间的目标温度影响。 Be表面和BeO表面层对热释放过程没有速率限制影响。
The deuterium retention and thermal recycling behavior of clean and oxide-covered beryllium is investigated by a combination of temperature programmed desorption, X-ray photoelectron spectroscopy and other methods. From the experimental results, the retention mechanisms are deduced and activation energies for the release processes are obtained from modeling. Implanted deuterium at 1keV kinetic energy is trapped locally in ion-induced defects with a release temperature above 700K. At a local deuterium concentration greater than 0.35 D/Be, the beryllium bulk is supersaturated. This leads to the formation of additional binding states with a release temperature of 450K and formation of BeD2, which decomposes at 570K. The amount of deuteride formed is influenced by the target temperature during implantation. The Be surface and BeO surface layers have no rate-limiting influence on the thermal release process.