Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes
Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes
复制标题
DOI：
10.1063/1.2939261
复制
发表时间：
2008-06
影响因子：
3.2
通讯作者：
S. Jo;Chang Su Kim;Jong Bok Kim;S. Ryu;J. Noh;H. Baik;Youn Sang Kim;Se-Jong Lee
中科院分区：
文献类型：
--
作者：
S. Jo;Chang Su Kim;Jong Bok Kim;S. Ryu;J. Noh;H. Baik;Youn Sang Kim;Se-Jong Lee
研究了四氟甲烷（CF4）等离子体处理铟锡氧化物（ITO）阳极对铟向聚3,4-乙烯二氧噻吩-聚苯乙烯磺酸盐（PEDOT:PSS）层扩散的影响。俄歇电子能谱（AES）深度剖面显示0.2at。当ITO未经过等离子体处理时，PEDOT:PSS层中存在%铟。血浆处理ITO使铟浓度提高到~ 6at.%。铟的增加可以由处理过的ITO的CF4等离子体缺氧来解释。PEDOT:PSS层中铟的存在与聚合物发光二极管的性能下降有关。
The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2at.% indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6at.%. The increase in indium can be explained by an oxygen deficiency in the CF4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.