High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
复制标题
基于 Zn 扩散诱导量子阱混合的具有非吸收窗口的高功率红光 GaInP/AlGaInP 激光二极管
DOI：
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发表时间：
2006-01
期刊：
影响因子：
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通讯作者：
Xiao Yu Ma (马骁宇)
中科院分区：
文献类型：
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作者：
Kai Zheng (郑凯);Tao Lin (林涛);Li Jiang (江李);Jun Wang (王俊);Su Ping Liu (刘素平);Xin Wei (韦欣);Guang Ze Zhang (张广泽);Xiao Yu Ma (马骁宇)
采用低压金属有机化学气相沉积(LP-MOCVD)技术在GaAs衬底上生长了GaInP/AlGaInP量子阱激光二极管(LDS)的层结构。为了提高器件的灾难性光学损伤(COD)水平，一种
The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a