Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
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非极性衬底上生长的 GaN/AlGaN 量子阱的光学特性
DOI：
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发表时间：
2008
期刊：
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通讯作者：
C. Humphreys
中科院分区：
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作者：
T. Badcock;P. Dawson;M. Kappers;C. McAleese;J. Hollander;C. Johnston;D. S. Rao;A. Sánchez;C. Humphreys
在本文中，我们报告了一系列的GaN/AlGaN多量子阱结构的光学性能的a面（112 <$0）GaN，已沉积在r面（11 <$02）蓝宝石衬底，与参考GaN模板相同的取向相比。模板层的低温光致发光光谱主要由两个发射带，这归因于涉及激子在该层的体积和电子和空穴被困在基面堆垛层错，指定X1和X2，分别重组。量子阱结构的光致发光光谱显示出相似的发射带，除了X1和X2都随着量子阱厚度的减小而向更高的能量移动。向更高能量的转变是由于量子限制对在与量子威尔斯相交的堆垛层错处捕获的载流子以及定位在量子威尔斯内的那些激子的影响。这种分配是部分基于激发光谱，揭示…
In this paper we report on the optical properties of a series of GaN/AlGaN multiple quantum well structures grown on a-plane (112¯0) GaN, which had been deposited on r-plane (11¯02) sapphire substrates, compared to a reference GaN template of the same orientation. The low temperature photoluminescence spectrum of the template layer is dominated by two emission bands, which we attribute to recombination involving excitons in the bulk of the layer and electrons and holes trapped at basal-plane stacking faults, designated X1 and X2, respectively. The photoluminescence spectra from the quantum well structures show similar emission bands except that both X1 and X2 shift to higher energy with decreasing quantum well thickness. The shift to higher energy is due to the effects of quantum confinement on carriers trapped at the stacking faults that intersect the quantum wells, as well as those excitons that are localized within the quantum wells. This assignment is based partly on excitation spectroscopy that revea...