Internal magnetic field in thin ZnSe epilayers
Internal magnetic field in thin ZnSe epilayers
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薄 ZnSe 外延层中的内部磁场
DOI：
10.1063/1.2404600
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发表时间：
2006
影响因子：
4
通讯作者：
N. Samarth
中科院分区：
文献类型：
--
作者：
S. Ghosh;N. Stern;B. Maertz;D. Awschalom;G. Xiang;M. Zhu;N. Samarth
利用泵浦-探测克尔旋转光谱技术在GaAs衬底上生长的n-ZnSe外延层中观察到了应变诱导的自旋分裂。自旋分裂能量映射出作为一个函数的泵探测分离，施加的电压，和温度在一系列样品的不同外延层厚度和压缩应变所产生的外延层-衬底晶格失配。使用光致发光和X射线衍射测量独立地量化应变。作者观察到自旋分裂的幅度随着施加的电压和温度而增加，并且高度依赖于晶体方向，沿着[11 <$0]消失。
Strain-induced spin splitting is observed and characterized using pump-probe Kerr rotation spectroscopy in n-ZnSe epilayers grown on GaAs substrates. The spin splitting energies are mapped out as a function of pump-probe separation, applied voltage, and temperature in a series of samples of varying epilayer thicknesses and compressive strain arising from epilayer-substrate lattice mismatch. The strain is independently quantified using photoluminescence and X-ray diffraction measurements. The authors observe that the magnitude of the spin splitting increases with applied voltage and temperature and is highly crystal direction dependent, vanishing along [11¯0].