Boron heavy doping for Si molecular beam epitaxy using a HBO2 source
Boron heavy doping for Si molecular beam epitaxy using a HBO2 source
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使用 HBO2 源进行硅分子束外延的硼重掺杂
DOI：
10.1063/1.97919
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发表时间：
1987
影响因子：
4
通讯作者：
N. Aizaki
中科院分区：
文献类型：
--
作者：
T. Tatsumi;H. Hirayama;N. Aizaki
使用 HBO2 源和常用的克努森池，在硅分子束外延 (MBE) 中实现了高载流子浓度的硼掺杂。在坩埚温度为 900°C 时，最大载流子浓度已达到 6×1020 cm−3。通过比较蒸气压的活化能和载流子浓度对坩埚温度的依赖性，可以得出结论，硼以 HBO2 (g) 的形式从 HBO2 源蒸发。通过克努森池快门打开和关闭获得的硼分布足够陡峭。外延膜中的氧浓度取决于生长温度。高于750°C时，氧浓度降低至二次离子质谱检测限以下1018 cm−3。这些结果使得在硅 MBE 中使用硼作为 p 型掺杂剂成为可能，而无需使用离子嵌入或非常高温的坩埚。
Boron doping with a high carrier concentration has been realized in Si molecular beam epitaxy (MBE) using a HBO2 source with the usual Knudsen cell. Maximum carrier concentration has reached 6×1020 cm−3 at crucible temperatures of 900 °C. From a comparison between activation energy for vapor pressure and carrier concentration dependence on crucible temperature, it was concluded that boron evaporated in the form of HBO2 (g) from the HBO2 source. The boron profile achieved by Knudsen cell shutter opening and closing was sufficiently steep. The oxygen concentration in the epitaxial film depended on the growth temperature. Above 750 °C, the oxygen concentration decreased to under the detection limit of secondary ion mass spectroscopy, 1018 cm−3. These results make it possible to use boron as the p‐type dopant in silicon MBE without using ion imbedding or a very high temperature crucible.