High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications
High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications
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DOI：
10.1109/led.2015.2511182
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发表时间：
2016-02
影响因子：
4.9
通讯作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Qi Zhou;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
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作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Qi Zhou;Zhaoji Li;Bo Zhang
在这封信中，提出了一种具有交替 MOS 和 p-n-p-n 晶闸管部分的 MOS 栅极触发晶闸管 (MGTT) 结构，并采用最先进的商用绝缘栅双极晶体管 (IGBT) 工艺制造。这种结构在相邻 MOS 单元之间引入了 p-n-p-n 晶闸管，从而在 N 漂移区带来强电导率调制，从而通过再生反馈机制实现超低的通态电阻。因此，所提出的 MGTT 表现出高峰值电流 (Ipeak) 和高电流上升率 (di/dt)。此外，再生反馈机制与MOS栅极触发操作相结合，有助于实现快速开启速度和高重复率。实验结果表明，所制作的MGTT具有5.2 kA的Ipeak和15.8 kA/μs的di/dt，以及高达20 Hz的高频重复。优异的器件性能，加上商业 IGBT 兼容的制造工艺，使得所提出的 MGTT 成为脉冲功率应用的有希望的候选者。
In this letter, a MOS gate-triggered thyristor (MGTT) structure with alternating MOS and p-n-p-n thyristor sections is proposed and fabricated with the state-of-the-art commercial insulated gate bipolar transistor (IGBT) process. This structure introduces a p-n-p-n thyristor between the adjacent MOS cells, which brings about strong conductivity modulation in N-drift region and, consequently, ultralow on-state resistance due to the regenerative feedback mechanism. Thus, the proposed MGTT exhibits high peak current (Ipeak) and high current rise rate (di/dt). Furthermore, the regenerative feedback mechanism in combination with MOS gate-triggered operation contributes to fast turn-ON speed and high repetition rate. The experimental results show that the fabricated MGTT exhibits an Ipeak of 5.2 kA and a di/dt of 15.8 kA/μs, as well as high-frequency repetition of up to 20 Hz. The excellent device performance, coupled with a commercial IGBT-compatible fabrication process, makes the proposed MGTT a promising candidate for pulse power applications.