Controlling the electronic structure of bilayer graphene
Controlling the electronic structure of bilayer graphene
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DOI：
10.1126/science.1130681
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发表时间：
2006-08-18
期刊：
影响因子：
56.9
通讯作者：
Rotenberg, Eli
中科院分区：
文献类型：
--
作者：
Ohta, Taisuke;Bostwick, Aaron;Rotenberg, Eli
我们描述了在绝缘碳化硅上沉积双层石墨烯薄膜的合成，并报道了用角分辨光电发射表征其电子带结构。通过选择性地调节每层载流子浓度，库仑电位的变化导致价带和导带间隙的控制。这种对能带结构的控制表明，双层石墨烯在原子级电子器件的开关功能中具有潜在的应用前景。
We describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission. By selectively adjusting the carrier concentration in each layer, changes in the Coulomb potential led to control of the gap between valence and conduction bands. This control over the band structure suggests the potential application of bilayer graphene to switching functions in atomic-scale electronic devices.