Determination of carrier diffusion length in p- and n-type GaN
Determination of carrier diffusion length in p- and n-type GaN
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p 型和 n 型 GaN 中载流子扩散长度的测定
DOI：
10.1117/12.2040645
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Ü. Özgür
中科院分区：
文献类型：
--
作者：
S. Hafiz;S. Metzner;F. Zhang;M. Monavarian;V. Avrutin;H. Morkoç;C. Karbaum;F. Bertram;J. Christen;B. Gil;Ü. Özgür
采用金属有机化学气相沉积法在c平面蓝宝石上生长p型和n型GaN外延层，通过光致发光（PL）测量了光激发载流子沿c方向的扩散长度。所研究的样品包含一个6 nm厚的In0.15Ga0.85N活性层，覆盖500 nm的p- GaN或1300 nm的n-GaN。顶部GaN层被分步骤蚀刻，并通过上述带隙激发监测来自InGaN有源区和下层的PL作为顶部GaN厚度在表面区域附近光产生时的函数。考虑到活性层和底层的吸收，在295 K和15 K时，mg掺杂的p型GaN的扩散长度分别为92±7 nm和68±7 nm，而无意掺杂的n型GaN的扩散长度分别为432±30 nm和316±30 nm。在另一个样品上进行了横断面阴极发光线扫描测量，测量了n型GaN中的扩散长度为280 nm。
Diffusion lengths of photo-excited carriers along the c-direction were determined from photoluminescence (PL) measurements in p- and n-type GaN epitaxial layers grown on c-plane sapphire by metal-organic chemical vapor deposition. The investigated samples incorporate a 6 nm thick In0.15Ga0.85N active layer capped with either 500 nm p- GaN or 1300 nm n-GaN. The top GaN layers were etched in steps and PL from the InGaN active region and the underlying layers was monitored as a function of the top GaN thickness upon photogeneration near the surface region by above bandgap excitation. Taking into consideration the absorption in the active and underlying layers, the diffusion lengths at 295 K and at 15 K were measured to be about 92 ± 7 nm and 68 ± 7 nm for Mg-doped p-type GaN and 432 ± 30 nm and 316 ± 30 nm for unintentionally doped n-type GaN, respectively. Cross-sectional cathodoluminescence line-scan measurement was performed on a separate sample and the diffusion length in n-type GaN was measured to be 280 nm.
GaN 和 ZnSe 中的少数载流子扩散长度
影响因子：
1.8
作者：
T. Miyajima;M. Ozawa;T. Asatsuma;H. Kawai;M. Ikeda
通讯作者：
M. Ikeda
未掺杂和硅掺杂 GaN 外延膜中少数载流子扩散长度的表面光电压光谱
DOI：
10.1002/pssc.200461332
发表时间：
2005
期刊：
Physica Status Solidi (c)
影响因子：
--
作者：
Seong;J. Kopanski;youn;L. Robins
通讯作者：
L. Robins