Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
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DOI：
10.1063/1.4959573
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发表时间：
2016-04
影响因子：
4
通讯作者：
T. Shang;Qingfeng Zhan;Heming Yang;Z. Zuo;Yali Xie;Lan Liu;Sifan Zhang;Y. Zhang;Hsby Li-
中科院分区：
文献类型：
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作者：
T. Shang;Qingfeng Zhan;Heming Yang;Z. Zuo;Yali Xie;Lan Liu;Sifan Zhang;Y. Zhang;Hsby Li-
利用自旋霍尔磁电阻（SMR）研究了Pt/NiO/Y3 Fe 5 O 12（Pt/NiO/YIG）异质结中反铁磁绝缘层NiO薄膜的自旋电流输运.只要温度接近或高于NiO的阻断温度，SMR信号就与没有NiO层的SMR信号相当，这表明绝缘NiO的磁波动对于将自旋电流从Pt传输到YIG层是必不可少的。另一方面，SMR信号在低温下变得可忽略不计地小，并且常规各向异性磁阻和异常霍尔电阻在任何温度下都非常小，这意味着NiO的插入完全抑制了由YIG磁邻近效应（MPE）引起的Pt磁化。薄NiO层的双重作用是抑制Pt和YIG之间的磁相互作用或MPE，并在高温下保持有效的自旋电流传输。
We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.