A 1.65 µm region external cavity laser diode using an InP gain chip and a fibre Bragg grating
A 1.65 µm region external cavity laser diode using an InP gain chip and a fibre Bragg grating
复制标题
DOI:
10.1117/12.975302
复制
发表时间:
2012-10
期刊:
影响因子:
--
通讯作者:
F. Chen;J. Hodgkinson;S. Staines;Stephen W. James;R. Tatam
中科院分区:
文献类型:
--
作者:
F. Chen;J. Hodgkinson;S. Staines;Stephen W. James;R. Tatam
We present the construction of an external cavity laser (ECL) diode using an InP semiconductor gain chip and a fibre Bragg grating (FBG), designed to have an emission wavelength that coincides with an absorption line of methane, to be used for spectroscopic gas sensing. The FBG was employed as a wavelength selective and feedback element, which will potentially provide the laser with wavelength tuning capability. Narrow linewidth lasing output of less than 5 MHz was achieved. To our knowledge, this is the first FBG based ECL in the 1.65 µm region.