Chemical potential imbalance mediated CVD growth of atomically thin hexagonal boron nitride fractal patterns
Chemical potential imbalance mediated CVD growth of atomically thin hexagonal boron nitride fractal patterns
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化学势不平衡介导原子薄六方氮化硼分形图案的 CVD 生长
DOI：
10.1016/j.matlet.2022.132788
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发表时间：
2022
影响因子：
3
通讯作者：
Wenlong Wang
中科院分区：
文献类型：
--
作者：
Jinjian Guo;Yu Zhao;Xuedong Bai;Wenlong Wang
• 通过CVD 实现单层六方氮化硼的分形可控生长。 • 分形图案是在严重的N/B 化学势不平衡中产生的。 • 化学势影响边缘的动态生长动力学。 • 分形维数分析揭示了粗略的边界和自相似性。非平衡过程中产生的分形图案在自然界中普遍存在，但其背后的机制尚不完全清楚。在这里，我们利用相对较高的氮前体通量通过化学气相沉积成功地制备了富氮边缘单层六方氮化硼（h-BN）分形薄片。引入分形维数分析来表征分形片的边界粗糙度，通过盒数法计算得到的分形维数为1.92，表明h-BN分形片具有粗糙的边界。此外，基于晶体生长原理提出了一种可能的形态发生机制，阐明了严重的化学势不平衡在分形薄片形成中的作用。
• The fractal controllable growth of monolayer hexagonal boron nitride by CVD. • Fractal patterns are generated in a severe N/B chemical potential imbalance. • Chemical potential influences the kinetic growth dynamics of edges. • Fractal dimension analysis reveals rough boundaries and self-similarity. Fractal patterns produced in non-equilibrium processes are ubiquitous in nature, but the mechanisms behind them are not fully understood. Here, we successfully fabricated nitrogen-rich edge monolayer hexagonal boron nitride (h-BN) fractal flakes using the relatively high N precursor flux through chemical vapor deposition. Fractal dimension analysis was introduced to characterize the boundary roughness of fractal flake, the fractal dimension calculated by the box-counting method is 1.92, suggesting that the h-BN fractal flake possesses a rough boundary. Moreover, a possible morphogenesis mechanism was proposed based on the crystal growth principle, elucidating the role of severe chemical potential imbalance in the formation of fractal flakes.