Frequency-dependent electrical properties in Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin film for ferroelectric memory application
Frequency-dependent electrical properties in Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin film for ferroelectric memory application
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DOI：
10.1088/0268-1242/25/3/035006
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发表时间：
2010-03
影响因子：
1.9
通讯作者：
M. Tang;G. Dong;Y. Sugiyama;H. Ishiwara
中科院分区：
文献类型：
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作者：
M. Tang;G. Dong;Y. Sugiyama;H. Ishiwara
采用化学溶液沉积法在Pt（1 1 1）/Ti/SiO2/Si（1 0 0）衬底上制备了[Pb（Zr 0. 4，Ti 0. 6）O3]1−x[Bi（Zn 0. 5，Ti 0. 5）O3]x（PZT-BZT）（x = 0. 03）薄膜，研究了薄膜的频率依赖电学性能.极化与电场（P-E）的磁滞回线进行了研究的频率范围从5 Hz到50 kHz。我们发现，随着频率的增加，剩余极化（Pr）减小，矫顽场（Ec）增加。介电常数（εr）和损耗角正切（tan δ）也被发现是强烈的频率依赖性。这些频率依赖的性质可能归因于来自域切换的粘度。
Frequency-dependent electrical properties were investigated in [Pb(Zr0.4,Ti0.6)O3]1−x[Bi(Zn0.5,Ti0.5)O3]x (PZT–BZT) (x = 0.03) thin films, which were deposited on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by chemical solution deposition. The polarization versus electric field (P–E) hysteresis loops were studied for frequencies ranging from 5 Hz to 50 kHz. We found that remnant polarization (Pr) decreases and coercive field (Ec) increases when frequency increases. The dielectric constant (εr) and the loss tangent (tan δ) were also found to be strongly frequency-dependent. These frequency-dependent properties may be attributed to the viscosity from domain switch.