Enhanced triethylamine sensing properties by designing Au@SnO2/MoS2 nanostructure directly on alumina tubes

Enhanced triethylamine sensing properties by designing Au@SnO2/MoS2 nanostructure directly on alumina tubes
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DOI:
10.1016/j.snb.2017.05.174
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发表时间:
2017-12
影响因子:
8.4
通讯作者:
Wenru Li;Hongyan Xu;Ting-Ting Zhai-Ting;Huanqin Yu;Zhengrun Chen;Zhiwen Qiu;Xiaopan Song;Jie-qiang Wang-Jie
Wenru Li;Hongyan Xu;Ting-Ting Zhai-Ting;Huanqin Yu;Zhengrun Chen;Zhiwen Qiu;Xiaopan Song;Jie-qiang Wang-Jie
中科院分区:
化学1区
文献类型:
--
作者:
Wenru Li;Hongyan Xu;Ting-Ting Zhai-Ting;Huanqin Yu;Zhengrun Chen;Zhiwen Qiu;Xiaopan Song;Jie-qiang Wang-Jie

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二维半导体由于其较大的表面积与体积比而成为有前途的气敏材料。然而,二维半导体气体传感器存在响应低、恢复时间长、选择性不足等缺点限制了其发展。为了优化MoS2传感器的气敏性能,通过在MoS2纳米花表面沉积Au和SnO2纳米粒子,设计并合成了传感材料的三材料复合纳米结构。与原始MoS2传感器相比,Au@SnO2/MoS2传感器对三乙胺表现出更好的传感特性,例如更高的灵敏度和更快的响应/恢复速度。在耗尽层模型的基础上,从Au@SnO2肖特基接触和SnO2/MoS2N-N异质结的角度讨论了Au@SnO2/MoS2传感器的增强传感性能。此外,MoS2纳米花是通过一种简便且经济有效的水热方法直接在Al2O3管上生长的。并采用脉冲激光沉积和直流溅射方法构建了Au纳米粒子修饰的SnO2/MoS2纳米花异质结构。
Two dimensional semiconductors are promising gas sensing materials due to their large surface-to-volume ratio. However, some drawbacks just like low response, long recovery time, and insufficient selectivity limits the development of two dimensional semiconductors gas sensors. In order to optimize the gas sensing properties of MoS2sensors, tri-material compound nanostructure of sensing materials is designed and synthesized by depositing Au and SnO2nanoparticles on the surface of MoS2nanoflowers. Comparing with the pristine MoS2sensor, the Au@SnO2/MoS2sensor exhibits better sensing properties to triethylamine, such as higher sensitivity and faster response/recovery speed. The enhanced sensing properties of Au@SnO2/MoS2sensor are discussed from the points of Au@SnO2Schottky contact and SnO2/MoS2N-N heterojunction on the basic of depletion layer model. Moreover, MoS2nanoflowers are directly grew on Al2O3tubes via a facile and cost-effective hydrothermal method. And the construction of Au nanoparticles decorated SnO2/MoS2nanoflowers heterostructure were built by employing the pulsed laser deposition and DC-sputtering methods.