ZnO symmetric nanosheets integrated with nanowalls
ZnO symmetric nanosheets integrated with nanowalls
复制标题
DOI:
10.1063/1.2005386
复制
发表时间:
2005-07
影响因子:
4
通讯作者:
Ruey‐Chi Wang;Chuan-Pu Liu;Jow-Lay Huang;Shu-Jen Chen
中科院分区:
文献类型:
--
作者:
Ruey‐Chi Wang;Chuan-Pu Liu;Jow-Lay Huang;Shu-Jen Chen
Diverse ZnO integrated nanostructures, constructed by epitaxial nanowalls and symmetric single-crystalline nanosheets, were successfully synthesized via a strain-assisted self-catalyzed process at a low temperature of 500°C. The nanostructures started with the growth of ZnO nanowires, nucleated on a rugged ZnO single-crystalline film via a strain-assisted self-catalyzed growth mechanism. The nanowalls were then formed by the interconnection of the nanowires. Finally, the nanosheets were grown from the edges of the nanowalls. The growth mechanisms were supported by direct experimental evidence. Room-temperature cathodoluminance spectra show a relatively strong and sharp ultraviolet emission as well as a weak and broad green emission. The integrated nanostructure may be applied to develop self-inclusive nanoelectronics.