X‐ray photoelectron spectroscopic analysis of growth and thermal stability of palladium ultra thin films on alumina/NiAl(110)
X‐ray photoelectron spectroscopic analysis of growth and thermal stability of palladium ultra thin films on alumina/NiAl(110)
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X射线光电子能谱分析氧化铝/NiAl(110)上钯超薄膜的生长和热稳定性
DOI：
10.1002/sia.1859
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发表时间：
2004
影响因子：
1.7
通讯作者：
T. Lay
中科院分区：
文献类型：
--
作者：
Weijie Song;M. Yoshitake;T. Lay
我们使用X射线光电子能谱研究了Pd超薄膜在Al2O3/NiAl（110）上的原位生长和热稳定性。结果表明，Pd在Al2O3/NiAl（110）表面以0.2 μ m/min的沉积速率逐层生长，在初始生长过程中Pd覆盖层与基体之间没有明显的相互作用。高温处理后，Pd扩散到基底中，氧化铝层厚度显著增加。当温度低于570 K时，Pd起催化剂作用，当温度高于670 K时，生成PdO。版权所有© 2004年约翰威利父子有限公司。
We have studied the growth and thermal stability of Pd ultra‐thin films on Al2O3/NiAl(110) in situ using x‐ray photoelectron spectroscopy. The results showed that Pd grew in a nearly layer‐by‐layer manner on the Al2O3/NiAl (110) surface at a deposition rate of 0.2 Å/min. No strong interaction between the Pd over‐layer and the substrate was observed during initial growth. After high‐temperature treatments, Pd diffused into the substrate and the alumina layer thickness increased significantly. Palladium served as a catalyst for this reaction when the temperature was lower than 570 K; PdO formed when the temperature was higher than 670 K. Copyright © 2004 John Wiley & Sons, Ltd.