N incorporation and optical properties of GaAsN epilayers on (3 1 1)A/B GaAs substrates
N incorporation and optical properties of GaAsN epilayers on (3 1 1)A/B GaAs substrates
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DOI：
10.1088/0022-3727/44/1/015402
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发表时间：
2011-01
期刊：
影响因子：
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通讯作者：
Xiuxun Han;Hidetoshi Suzuki;Jong-Han Lee;N. Kojima;Y. Ohshita;M. Yamaguchi
中科院分区：
文献类型：
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作者：
Xiuxun Han;Hidetoshi Suzuki;Jong-Han Lee;N. Kojima;Y. Ohshita;M. Yamaguchi
We compared the N incorporation and optical emission in GaAsN epilayers grown on (3 1 1)A/B and (1 0 0) GaAs substrates using a chemical beam expitaxy system. Over the growth-temperature range 420 –460 °C, N composition was enhanced 2–3 times for the epitaxial growth following [3 1 1]B orientation, but reduced in the [3 1 1]A direction. Both (3 1 1) A and B substrates are effective to weaken the photoluminescence emission from the deep levels as compared with the (1 0 0) plane. The deep-level emission can be further suppressed for all substrates by increasing the growth temperature and/or performing postgrowth annealing. However, in contrast to the continuous increase in total emission intensities of (3 1 1)B sample, a decreasing tendency was recorded for (3 1 1)A with the rise in growth temperature. The optimum growth temperature and annealing conditions for better crystal quality were found to depend on the growth orientation and surface polarity. These results present a potential approach to improving the N incorporation efficiency in Ga(In)AsN materials through adopting high-index substrates such as (3 1 1)B.
