Electrical characterization and hydrogen gas sensing properties of a n-ZnO∕p-SiC Pt-gate metal semiconductor field effect transistor
Electrical characterization and hydrogen gas sensing properties of a n-ZnO∕p-SiC Pt-gate metal semiconductor field effect transistor
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n-ZnO∕p-SiC Pt 栅金属半导体场效应晶体管的电学特性和氢气传感特性
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
Y. Kokubun
中科院分区：
文献类型：
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作者：
S. Kandasamy;W. Wlodarski;A. Holland;S. Nakagomi;Y. Kokubun
报道了一种新型的氢气敏感n-ZnO scinp-SiC Pt栅金属半导体场效应晶体管（MESFET）。观察到的源漏区的电流-电压曲线表明，该MESFET工作在增强模式。由于不同的环境气氛，栅极电位的变化引起耗尽区宽度的变化，从而调制n沟道（ZnO层）中的电流。利用能带图讨论了所提出的MESFET结构的H2气敏机理。
A new hydrogen gas sensitive n-ZnO∕p-SiC Pt-gate metal semiconductor field effect transistor (MESFET) is reported. The observed current-voltage curves for the source to drain region indicate that this MESFET operates in enhancement mode. A change in gate potential, due to different ambient atmospheres caused a change in the width of the depletion region, hence modulating the current in the n channel (ZnO layer). The H2 gas sensing mechanism of the presented MESFET structure is discussed using energy band diagrams.