Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
Evidences for the depletion region induced by the polarization of ferroelectric semiconductors
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DOI：
10.1063/1.3268783
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发表时间：
2009-12-21
影响因子：
4
通讯作者：
Wang, Junling
中科院分区：
文献类型：
--
作者：
Yuan, Guo-Liang;Wang, Junling
铁电材料具有自发极化，其表面电荷由负向正变化。当铁电半导体被极化时，感应电场可以驱动自由载流子，例如，n型材料中的电子，以中和表面电荷，直到这种场变为零。自由载流子的这种扩散引起耗尽区。极化开关可以将耗尽区移动到相反的表面，因此它可以用来操纵任何受这种耗尽区影响的性质，例如单向电流和光伏电流。(C)2009年美国物理学会。[doi：10.1063/1.3268783]
Ferroelectric materials possess spontaneous polarization pointing from negative to positive bound surface charges. When a ferroelectric semiconductor is polarized, the induced electric field can drive free carriers, e.g., electrons in an n-type material, to neutralize surface charges until such field becomes zero. Such diffusion of free carriers induces a depletion region. Polarization switch can move the depletion region to the opposite surface, thus it can be used to manipulate any properties that are affected by such depletion region, such as unidirectional current and photovoltaic current. (C) 2009 American Institute of Physics. [doi:10.1063/1.3268783]