Effect of grain boundary/interface network on fracture due to atom migration induced by stress in an lsi conductor
Effect of grain boundary/interface network on fracture due to atom migration induced by stress in an lsi conductor
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晶界/界面网络对大硅导体中应力引起的原子迁移断裂的影响
DOI：
10.1299/kikaia.65.2497
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
R. Ohtani
中科院分区：
文献类型：
--
作者：
T. Shibutani;T. Kitamura;R. Ohtani
从原子沿沿着和界面扩散的角度分析了大规模集成电路导体中原子迁移引起的应力。重点讨论了晶界和界面的网络结构对腔场附近原子通量的影响。对多晶网络导体、竹节结构导体和近竹节结构导体进行了数值分析。获得的结果如下。(i)在多晶导体中，原子沿沿着晶界的迁移在空腔附近被激活，而在没有空腔的导体中几乎没有流动。这是由于应力分布，这是由空腔引入。腔的生长是原子输运的结果。(ii)对于所有的模拟，导体和周围的钝化层之间的界面差异激活了原子沿着沿着GB在导体内部的迁移。这表明空穴是在晶界扩散和界面扩散的相互作用下生长的。(iii)在含有少量GB三结点的近竹结构导体中，空穴的增长速率比竹结构导体中的空穴增长速率快。这缩短了导体的寿命，这与以前报道的实验观察相一致。
Atom migration induced stress in an LSI conductor is analyzed on the basis of diffusion along grain boundary (GB) and interface. The focus is put on the network of GB and interface, which strongly affect the atom flux near the cavity. The numerical analyses are conducted for the conductors with polycrystalline network, bamboo structure and near-bamboo structure. Results obtained are as follows. (i) In a conductor with polycrystalline, the atom migration along GBs is activated near a cavity while there is little flow in a conductor without the cavity. This is due to the stress distribution, which is introduced by the cavity. The cavity grows by the atom transport. (ii) Interface difiusion between the conductor and the surrounded passivation activates the atom migration along GBs inside of a conductor for all simulations. This implies that the cavity grows under the interaction between GB diffusion and interface one. (iii) Growth rate of a cavity in a conductor with the near-bamboo structure, which contains a few triple junctions of GB, is faster than that in a one with the bamboo structure. This shortens the life of conductor, which is correspondent with experimental observation reported before.