Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm
Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm
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接近 1.6 μm 的 Ge/Si 量子点超晶格的室温电致发光
DOI：
10.1002/pssa.200309006
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
P. Werner
中科院分区：
文献类型：
--
作者：
V. Talalaev;G. E. Cirlin;A. Tonkikh;N. Zakharov;P. Werner
我们在Si（100）p +衬底上制作了室温下工作波长为1.6 μm的发光二极管。该结构的生长通过分子束外延进行。p-i-n二极管的有源区由20层Ge/Si自组装量子点组成。对有源区的生长参数（Ge层数量、Ge厚度、Ge生长速率）进行了优化，使器件在室温下具有良好的电致发光性能。
We have fabricated a light-emitting diode on a Si(100) p + substrate operating at room temperature close to 1.6 μm. The growth of the structure was performed by molecular beam epitaxy. The active zone of the p-i-n diode consists of 20 layers of Ge/Si self-assembled quantum dots. The growth parameters of the active zone (Ge layers quantity Ge thickness, Ge growth rate) were optimized for effective electroluminescence at room temperature.