Potential Gain in Multicrystalline Silicon Solar Cell Efficiency by n-Type Doping
Potential Gain in Multicrystalline Silicon Solar Cell Efficiency by n-Type Doping
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n 型掺杂可提高多晶硅太阳能电池效率
DOI：
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发表时间：
2015
影响因子：
3
通讯作者：
M. Schubert
中科院分区：
文献类型：
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作者：
F. Schindler;B. Michl;A. Kleiber;H. Steinkemper;J. Schon;W. Kwapil;P. Krenckel;S. Riepe;W. Warta;M. Schubert
本研究的目的是定量调查的材料限制和效率潜力的一个完整的多晶（mc）n-型硅块相比，同一纯度水平的mc p-型块，以预测的潜力，mc n-型硅的太阳能电池的工业生产。因此，两个标准mc硅块在相同的条件下结晶（相同的高纯度原料、坩埚系统和温度分布），仅在它们的掺杂类型上不同。在不同的太阳能电池工艺步骤之后，通过扩散长度的光致发光成像来分析晶片沿着整个块高度的材料质量。体复合相关的效率损失进行评估的“效率限制体复合分析（ELBA）”，结合注入依赖的寿命图像与PC 1D电池模拟。在PC 1D电池模拟中考虑了基底电阻率沿区块沿着变化的影响，并得到Sentaurus器件模拟的支持。该分析预测，与mc p型硅相比，在典型的太阳能电池工艺之后，mc n型硅沿沿着整个块高度具有显著更高的材料相关效率潜力。此外，对于mc n型硅的效率潜力较少依赖于块位置。
This study aims for a quantitative investigation of the material limitations and the efficiency potential of an entire multicrystalline (mc) n-type silicon block in comparison with an mc p-type block of the same purity level in order to predict the potential of mc n-type silicon for the industrial production of solar cells. Therefore, two standard mc silicon blocks were crystallized under identical conditions (same high purity feedstock, crucible system, and temperature profiles), only differing in their type of doping. The material quality of wafers along the whole block height is analyzed after different solar cell process steps by photoluminescence imaging of the diffusion length. The bulk recombination related efficiency losses are assessed by an “efficiency limiting bulk recombination analysis (ELBA),” combining injection dependent lifetime images with PC1D cell simulations. The influence of the base resistivity variation along the block is considered in the PC1D cell simulations and backed up by Sentaurus Device simulations. This analysis predicts a significantly higher material-related efficiency potential after typical solar cell processes along the whole block height for mc n-type silicon compared with mc p-type silicon. In addition, the efficiency potential for mc n-type silicon depends less on block position.