Understanding the Effect of Unintentional Doping on Transport Optimization and Analysis in Efficient Organic Bulk-Heterojunction Solar Cells

Understanding the Effect of Unintentional Doping on Transport Optimization and Analysis in Efficient Organic Bulk-Heterojunction Solar Cells
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DOI:
10.1103/physrevx.5.011032
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发表时间:
2015-03-24
期刊:
影响因子:
12.5
通讯作者:
Durrant, James R.
Durrant, James R.
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Deledalle, Florent;Kirchartz, Thomas;Durrant, James R.

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In this paper, we provide experimental evidence of the effects of unintentional p-type doping on the performance and the apparent recombination dynamics of bulk-heterojunction solar cells. By supporting these experimental observations with drift-diffusion simulations on two batches of the same efficient polymer-fullerene solar cells with substantially different doping levels and at different thicknesses, we investigate the way the presence of doping affects the interpretation of optoelectronic measurements of recombination and charge transport in organic solar cells. We also present experimental evidence on how unintentional doping can lead to excessively high apparent reaction orders. Our work suggests first that the knowledge of the level of dopants is essential in the studies of recombination dynamics and carrier transport and that unintentional doping levels need to be reduced below approximately 7 x 10(15) cm(-3) for full optimization around the second interference maximum of highly efficient polymer-fullerene solar cells.