Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs /GaAs by low-pressure metalorganic chemical vapor deposition
Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs /GaAs by low-pressure metalorganic chemical vapor deposition
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DOI：
10.1063/1.1802376
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发表时间：
2004-10
影响因子：
4
通讯作者：
Tao Yang;S. Tsukamoto;J. Tatebayashi;M. Nishioka;Y. Arakawa
中科院分区：
文献类型：
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作者：
Tao Yang;S. Tsukamoto;J. Tatebayashi;M. Nishioka;Y. Arakawa
我们报告了一种通过低压金属有机化学气相沉积在 GaAs 衬底上的应变 In0.12Ga0.88As 缓冲层上提高自组装 InAs 量子点 (QD) 均匀性的方法。通过在 InAs QD 层和 In0.12Ga0.88As 缓冲层之间插入薄 GaAs 层并检查其厚度效应，我们证明可以通过增加薄 GaAs 层的厚度来改善 QD 的光致发光（PL）不均匀线宽。随着厚度从 0nm 增加到 2nm，PL 不均匀线宽在 7K 时从约 70meV 显着减小。 PL 不均匀线宽的显着改善是由于插入薄 GaAs 层导致 QD 从双峰分布变为仅由大 QD 组成的单峰分布。
We report an approach to improve the uniformity of self-assembled InAs quantum dots (QDs) grown on a strained In0.12Ga0.88As buffer layer on GaAs substrates by low-pressure metalorganic chemical vapor deposition. By inserting a thin GaAs layer between the InAs QD layer and the In0.12Ga0.88As buffer layer and examining its thickness effect, we demonstrate that the photoluminescence (PL) inhomogeneous linewidth from the QDs can be improved by increasing the thickness of the thin GaAs layer. The PL inhomogeneous linewidth is significantly decreased from about 70to20meV at 7K as the thickness is increased from 0to2nm. This significant improvement of the PL inhomogeneous linewidth is due to the fact that the QDs change from a bimodal distribution to a monomodal distribution consisting only of large QDs as a result of the inserted thin GaAs layer.