Intrinsic Spin Lifetime of Conduction Electrons in Germanium
Intrinsic Spin Lifetime of Conduction Electrons in Germanium
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锗中传导电子的本征自旋寿命
DOI：
10.1103/physrevb.86.085202
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发表时间：
2012
影响因子：
3.7
通讯作者：
H. Dery
中科院分区：
文献类型：
--
作者：
Pengke Li;Yang Song;H. Dery
我们研究了由于电子-声子散射引起的Ge中传导电子的本征自旋弛豫。我们得到了一般自旋取向的谷内和谷间自旋翻转矩阵元，并量化了由此产生的自旋弛豫各向异性。谷内自旋翻转矩阵元的形式是由紧凑的依赖于自旋的哈密顿量的本征态导出的，该哈密顿量位于$L点附近(热电子在Ge中填充)。从谷内和谷间矩阵元素的解析积分得到的自旋寿命与精细数值方法的独立结果显示出很好的一致性。
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent $\mathbf{k}$$\cdot$$\mathbf{p}$ Hamiltonian in the vicinity of the $L$ point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.