Bias-induced local heating in Au atom-sized contacts
Bias-induced local heating in Au atom-sized contacts
复制标题
DOI：
10.1088/0957-4484/17/21/008
复制
发表时间：
2006-11
期刊：
影响因子：
3.5
通讯作者：
M. Tsutsui;S. Kurokawa;A. Sakai
中科院分区：
文献类型：
--
作者：
M. Tsutsui;S. Kurokawa;A. Sakai
通过测量在0.60 ~ 0.95 V的高偏置条件下电导两能级波动（TLFs）的频率，研究了在4.2 K下Au原子尺寸触点（ASCs）中偏置引起的局部加热。实测logν呈宽单峰分布，随着偏置的增大，峰值频率logν向更高的值移动。logν - v图在4.2 K时是非线性的，而在77 K时则是线性的。logν的偏置依赖性差异表明，在4.2 K时，Au ASCs存在偏置引起的过热，这使得有效接触温度Teff远高于4.2 K。我们的实验结果表明。
Bias-induced local heating in Au atom-sized contacts (ASCs) has been studied at 4.2 K by measuring the frequency ν of the conductance two-level fluctuations (TLFs) under high biases of 0.60–0.95 V. The measured logν shows a broad single-peak distribution with the peak frequency logνm shifting to higher values with increasing bias. The logνm–V plot is nonlinear at 4.2 K in contrast to the linear behaviour observed at 77 K. The difference in the bias dependence of logνm manifests a bias-induced overheating in Au ASCs at 4.2 K, which renders the effective contact temperature Teff much higher than 4.2 K. Our experimental results suggest that .